The HOA086X/087X series consists of an infrared emitting diode facing an NPN silicon phototransistor encased in a black thermoplastic housing. The phototransistor switching takes place whenever an opaque object passes through the slot between emitter and detector. This series allows the user to choose from available options: (1) mounting tab configurations, (2) lead spacing, (3) electro-optical characteristics, (4) detector aperture size, and (5) housing materials.
The HOA86X series utilizes an IR transmissive polysulfone housing which features smooth optical faces without external aperture openings; this feature is desirable when aperture blockage from airborne contaminants is a possibility. The HOA087X series employs an opaque polysulfone housing with aperture openings for use in applications in which maximum rejection of ambient light is important and in situations where maximum position resolution is desired. The HOA086X/087X series employs plastic molded components. For additional component information see SEP8506 and SDP8406.
Housing material is polycarbonate. Housings are soluble in chlorinated hydrocarbons and ketones. Recommended cleaning agents are methanol and isopropanol.
|Product||Output||Sensor Aperture||Slot Width||On-State Collector Current|
|HOA0870-L55||Transistor||1,52 mm x 1,27 mm [0.060 in x 0.050 in]||3,18 mm [0.125 in]||0.50 mA|
|HOA0870-N51||Transistor||1,52 mm x 0,25 mm [0.060 in x 0.010 in]||3,18 mm [0.125 in]||0.50 mA|
|HOA0870-N55||Transistor||1,52 mm x 1,27 mm [0.060 in x 0.050 in]||3,18 mm [0.125 in]||0.50 mA|
|HOA0870-P51||Transistor||1,52 mm x 0,25 mm [0.060 in x 0.010 in]||3,18 mm [0.125 in]||0.50 mA|
|HOA0870-P55||Transistor||1,52 mm x 1,27 mm [0.060 in x 0.050 in]||3,18 mm [0.125 in]||0.50 mA|