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Overview

SEP8706 Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package.
The SEP8706 is an aluminum gallium arsenide infrared emitting diode molded in a side-emitting smoke gray plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current.
SEP8706-002 Plastic or Ceramic Package Emitters - Honeywell

Technical Specifications

Product SEP8706-002
Product Type IR Component
Package Type Side-Emitting
Package Components Plastic
Beam Angle (Degree) 50
Power Output 0.45 - 0.90 mW/cm²
Output Wavelength 880 nm
Spectral Bandwidth 80 nm
Forward Voltage 1.7 V
Operating Temperature -40 °C to 85 °C [-40 °F to 185 °F]
Forward Current 20 mA
Continuous Forward Current 50 mA
Reverse Breakdown Voltage 3 V
Spectral Shift With Temperature 0.2 nm/°C
Rise and Fall Time 0.7 µs
Power Dissipation 100 mW
Availability Global
Series Name SEP8706

Technical Specifications

Product SEP8706-002
Product Type IR Component
Package Type Side-Emitting
Package Components Plastic
Beam Angle (Degree) 50
Power Output 0.45 - 0.90 mW/cm²
Output Wavelength 880 nm
Spectral Bandwidth 80 nm
Forward Voltage 1.7 V
Operating Temperature -40 °C to 85 °C [-40 °F to 185 °F]
Forward Current 20 mA
Continuous Forward Current 50 mA
Reverse Breakdown Voltage 3 V
Spectral Shift With Temperature 0.2 nm/°C
Rise and Fall Time 0.7 µs
Power Dissipation 100 mW
Availability Global
Series Name SEP8706

Documents

TITLE DOCUMENT TYPE LANGUAGE SIZE
SEP8706 Series Plastic or Ceramic Package Infrared Emitters Catalog Information Catalog Information English 411KB
IRED Power Dissipation Consideration Technical Information English 29KB
Summary of SEC450 GaAs:Si IRED Chip Long-Term Operating Life Study Technical Information English 196KB
Summary of SEC555 GaAs:Si IRED Chip Long-Term Operating Life Study Technical Information English 119KB
Infrared Sensors Line Guide Product Line Guide English 1MB

Product Features

  • Side-looking plastic package
  • 50 ° (nominal) beam angle
  • 880 nm wavelength
  • Higher output power than GaAs at equivalent drive current
  • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

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