Honeywell Sensing and Control

 
 

SEP8706-002

 

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SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package
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Description
The SEP8706 is an aluminum gallium arsenide infrared emitting diode molded in a side-emitting smoke gray plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current.

Features Potential Applications
Features
  • Side-looking plastic package
  • 50 ° (nominal) beam angle
  • 880 nm wavelength
  • Higher output power than GaAs at equivalent drive current
  • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
Product Specifications
Series Name Infrared Emitting Diode
Product Type IR Component
Power Output 0.45 - 0.90 mW/cm²
Beam Angle (Degree) 50
Package Style Side-Emitting
Package Components Plastic
Forward Current 20 mA
Continuous Forward Current 50 mA
Forward Voltage 1.7 V
Reverse Breakdown Voltage 3 V
Output Wavelength 880 nm
Spectral Bandwidth 80 nm
Spectral Shift With Temperature 0.2 nm/°C
Rise and Fall Time 0.7 µs
Power Dissipation 100 mW
Operating Temperature Range -40 °C to 85 °C [-40 °F to 185 °F]
Availability Global