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SE Series GaAs Infrared Emitting Diode, TO-46 Metal Can Package
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Description
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The SE3470/5470 series consists of aluminum gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3470 series has flat window cans providing a wide beam angle, while the SE5470 series has glass lensed cans providing a narrow beam angle. These devices typically exhibit 70% greater power output than gallium arsenide devices at the same forward current. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environments.
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| Features |
Potential Applications |
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Features
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- TO-46 metal can package
- Choice of flat window or lensed package
- 90 ° or 20 ° (nominal) beam angle option
- 880 nm wavelength
- Higher output power than GaAs at equivalent drive currents
- Wide operating temperature range [-55 °C to 125 °C]
- Ideal for high pulsed current applications
- Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491 phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger
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| Product Specifications |
| Series Name |
Infrared Emitting Diode |
| Product Type |
IR Component |
| Power Output |
1.00 mW min |
| Beam Angle (Degree) |
20 |
| Package Style |
T0-46, Dome Lensed |
| Package Components |
Metal |
| Forward Current |
100 mA |
| Continuous Forward Current |
100 mA |
| Forward Voltage |
1.7 V |
| Reverse Breakdown Voltage |
3 V |
| Output Wavelength |
935 nm |
| Spectral Bandwidth |
50 nm |
| Spectral Shift With Temperature |
0.3 nm/°C |
| Rise and Fall Time |
0.7 µs |
| Power Dissipation |
150 mW |
| Operating Temperature Range |
-55 °C to 125 °C [-67 °F to 257 °F] |
| Availability |
Global |
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