Honeywell Sensing and Control

 
 

SE1470-003L

 


SE Series AlGaAs Infrared Emitting Diode, Metal Can Coaxial Package

Actual product appearance may vary.
 

Description
The SE1470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a glass lensed metal can coaxial package. The package may have a tab or second lead welded to the can as an optional feature (SE1470-XXXL). Both leads are flexible and may be formed as required to fit various mounting configurations. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current.

Features Potential Applications
Features
  • Compact metal can coaxial package
  • 24 ° (nominal) beam angle
  • 880 nm wavelength
  • Higher output power than GaAs at equivalent drive currents
  • Wide operating temperature range [-55 °C to 125 °C]
  • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington
Product Specifications
Series Name Infrared Emitting Diode
Product Type IR Component
Power Output 1.10 - 4.50 mW/cm²
Beam Angle (Degree) 24
Package Style Coaxial, Lead Case
Package Components Metal
Forward Current 20 mA
Forward Voltage 1.8 V
Reverse Breakdown Voltage 3 V
Output Wavelength 880 nm
Spectral Bandwidth 80 nm
Spectral Shift With Temperature 0.2 nm/°C
Rise and Fall Time 0.7 µs
Power Dissipation 75 mW
Operating Temperature Range -55 °C to 125 °C [-67 °F to 257 °F]
Availability Global